BFT44 v cbo collector ? base voltage (i e = 0) v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i b = 0) i c collector current p d total device dissipation t c = 50c t stg storage temperature t j junction temperature r ja thermal resistance junction to ambient r jc thermal resistance junction to case -300v -300v -5v -0.5a 5w ?65 to 150c 200c 200c/w 30c/w absolute maximum ratings (t case = 25c unless otherwise stated) pnp silicon transistor features ? high voltage hermetic to39 package full screening options available mechanical data dimensions in mm (inches) semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6075 issue 1 to?39 (to205ad) pin 1 ? emitter underside view pin 2 ? base pin 3 ? collector 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045)
BFT44 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6075 issue 1 parameter test conditions min. typ. max. unit electrical characteristics (t case = 25 c unless otherwise stated) test conditions i c = -10ma, i b = 0 v cb = -200v i e = 0 v be = -3v i c = 0 i c =-10ma, i b =-1.0ma i c =-100ma, i b =-10ma i c =-500ma, i b =-100ma i c =-10ma, i b =-1.0ma i c =-100ma, i b =-10ma i c =-500ma, i b =-100ma v ce = -10v i c = -1.0ma v ce = -10v i c = -10ma v ce = -10v i c = -100ma parameter v (br)ceo collector ? emitter breakdown voltage i cbo collector cut-off current i ebo emitter cut-off current v ce(sat)* collector ? emitter saturation voltage v be(sat)* base ? emitter saturation voltage h fe* dc current gain min typ max -300 -5 -5 -0.5 -1.4 -5.0 -0.8 -0.9 -1.2 30 50 150 50 unit v a a v v ? f t transition frequency c c collector capacitance t on turn on time t off turn off time i c =-15ma v ce = -10v f = 35mhz v cb = -20v i e = 0 f = 1mhz v cc =-31v ,i c =-50ma, i b1 = i b2 =5ma v cc =-31v ,i c =-500ma,i b1 = i b2 =100ma v cc =-31v ,i c =-50ma, i b1 = i b2 =5ma v cc =-31v ,i c =-500ma,i b1 = i b2 =100ma 70 15 125 125 850 125 mhz pf ns ns ns ns dynamic characteristics (t case = 25 c unless otherwise stated) (*) pulse test : pulse width < 300 s ,duty cycle < 2%
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